Questions

What is the width of depletion layer in P-N junction diode?

What is the width of depletion layer in P-N junction diode?

The width of the depletion region in a p–n junction diode is 500nm and an intense electric field of 6×105V/m is also found to exist.

Why depletion region width on the heavily doped side of n p diode is less?

Hence, the positive ions at n-side and negative ions at p-side (which acts like a barrier) are decreased over a given period. This decreases the width of depletion region. Thus, the width of depletion region in the heavily doped semiconductor decreases over a given period.

On what factors the width of depletion region depends?

Depletion region: The region near the p-n junction where the flow of charge carriers (free electrons and holes) is reduced over a given period and finally results in zero charge carriers. The width of the depletion region depends on the number of impurities added to the semiconductor.

What is the width of the depletion region?

The physical width of the depletion region in a typical Si diode ranges from a fraction of a micrometer to tens of micrometers depending on device geometry, doping profile, and external bias.

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How does the width of depletion region of a pn junction diode change with decrease in reverse bias?

How does the width of the depletion layer of a p-n junction diode change with decrease in reverse bias? The width of depletion layer of a p-n junction decreases with the decrease in reverse bias.

What happen to the width of depletion region when a junction diode is?

Answer: When a p-n junction is forward biased: charge carriers are pushed towards the junction. The width of the depletion layer is increased, and no charge carriers meet.

Why does the width of depletion region increase in reverse bias?

A P-N junction diode is formed by joining one P-type and one N-type diode. This happens because when we apply reverse bias voltage the electrons are drifted away from the junction and hence, conduction is not possible. So, the width of the depletion region in a P-N junction diode is increased by reverse bias.

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How depletion region is affected forward biasing the diode?

The depletion layer of a diode is substantially thinner while in forward bias and much thicker when in reverse bias. Forward bias decreases a diode’s resistance, and reverse bias increases a diode’s resistance.