Why are emitter-base and collector doped differently?
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Why are emitter-base and collector doped differently?
To improve the emitter efficiency and the common-base current gain (a), it can be shown that the emitter should be much heavily doped than the base. A low doping level of the collector increases the size of the depletion region. This increases the maximum collector-base voltage and reduces the base width.
What are the comparative differences in doping concentration between emitter-base and collector?
Emitter is lightly doped, collector is heavily doped and base is moderately doped.
What do you know about the doping of emitter-base and collector?
Emitter is heavily doped. Its job is to emit or inject electrons into the base. Bases are lightly doped and very thin, it passes most of the emitter-injected electrons on to the collector. The doping level of collector is intermediate between the heavy doping of emitter and the light doping of the base.
Why collector is heavily doped?
In most transistors, emitter is heavily doped. Its job is to emit or inject electrons into the base. The doping level of collector is intermediate between the heavy doping of emitter and the light doping of the base. The collector is so named because it collects electrons from base.
Why the doping of collector is less compared to emitter?
purpose of collecter is to collect the electrons coming from Emitter via Base. Since Colectro duty is to only collect not emit it is moderately doped…. Morever it should have less surface area when compared to that of Emitter to reduce power dissipation..
What are the functions of the emitter-base and collector regions in a transistor?
The base is the gate controller device for the larger electrical supply. The collector is the larger electrical supply, and the emitter is the outlet for that supply. By sending varying levels of current from the base, the amount of current flowing through the gate from the collector may be regulated.